Production method for integrated circuit - involves ion implantation mask which is produced on surface of substrate

摘要

The mask consists of an oxide layer with first zones permeable for ions of a certain energy, and with second zones impermeable for these ions. The first zones lie over transistor channels whose conduction relative to the substrate must be changed. The substrate with the mask is exposed to an ion source with the specified energy for a specified time in order to produce a specified change in the substrate in the channel area. A diffusion mask consisting of an SC layer and of an oxide layer (12) is formed. It defines sources and drains of FET's, while the SC layer forms edges of the channels. Ions are diffused through the mask, and sources, drains and the SC layers are connected into an integrated circuit.