| 摘要 |
1467289 Etching HEWLETT-PACKARD CO 15 Nov 1974 [3 Dec 1973] 49531/74 Heading B6J Surfaces 25 protected by resist layers 27 and supported on substrates 24, or the substrates 24 in the absence of the surfaces 25, are carried on a cathode 17 below an anode 13 in a container 11 and etched with a chemically reactive gas by both chemical action and momentum when the cathode is respectively biased and ionized gas particles are attracted to the cathode. The etchant gas may be tetrafluoromethane, sulphur hexafluoride or difluorodichloromethane. The substance etched may be tantalum nitride, molybdenum, tungsten, silicon, silicon dioxide or silicon nitride, and if it is silicon a thin layer of silicon dioxide may be interposed between it and the resist to prevent alloying. The resist may be aluminium, gold or photoresist. The container may be a glass bell-fan with metal top and bottom electrically grounded plates 15, 19, or a metal jar, in which case oxygen also is introduced into the container. The cathode is biased by an R.F. or D.C. power supply. |
