Dielectric film deposition method and apparatus.

摘要

Dielectric layers comprising a silicon oxide and having essentially constant thickness across a wafer are produced by a plasma-position method; in preferred processing, a wafer is supported on a surface which extends significantly past the edge of the wafer. Resulting layers may be further processed by localized etching of windows or vias, uniform layer thickness being particularly beneficial, when timed etching is used, to ensure uniformity of etched openings.