GASEOUS PHASE GROWING METHOD OF SILICON,申请号JP19750109941-传众专利搜索

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发明名称	GASEOUS PHASE GROWING METHOD OF SILICON
摘要
申请公布号	JPS5233843(A)	申请公布日期	1977.03.15
申请号	JP19750109941	申请日期	1975.09.12
申请人	TOKYO SHIBAURA ELECTRIC CO	发明人	KOTANI SHIGEO;SUMITOMO KOUSUKE
分类号	C23C16/24;C01B33/02	主分类号	C23C16/24
代理机构		代理人
主权项
地址

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