DYNAMIC ISOLATION OF HIGH DENSITY CONDUCTIVITY MODULATION STATES IN INTEGRATED CIRCUITS

摘要

The integrated circuit is formed in a monolithic semiconducting structure having a layer which is capable of being modulated at high frequency and an active semiconductor layer allowing high density hole transmission. This facility is created by zonal radiation so that high density recombination occurs in specific regions. The two layers in the semiconducting material are used to make up a pair of thyristors in parallel, inverted relative to each other they may be used to form a thyristor or a disc pair. Zones are created by masking off specific areas from 1 to 3 MeV, of 1014 to 1016 electrons per sq. cm radiation.