| 摘要 |
1495377 Charge coupled devices PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 6 Sept 1976 [9 Sept 1975] 36829/76 Heading H1K A charge coupled device is manufactured by providing on a semi-conductor substrate 1 a first insulating layer 2, a first conductive layer 3 and a second insulating layer 4, forming a first pattern in the layers 3 and 4, oxidizing the thus exposed edges 6 of the first conductive layer 3 to form there oxide thinner than the second insulating layer 4, depositing a second conductive layer 5 and forming therein a second pattern which partly overlaps the first pattern. The conductive layers 3, 5 may be of Al or Ta, optionally containing small amounts of Si or Cu, or of polycrystalline Si, the second insulating layer 4 and the oxide on the edge 6 being formed by anodic oxidation (using a lower applied voltage on the edge 6 than for the layer 4) or thermal oxidation, which may also be employed to form the first insulating layer 2. The layer 4 may alternatively be vapour deposited. The second conductive layer 5 may contact the first conductive layer 3 through windows etched in the second insulating layer 4. |
