发明名称 |
Silicon controlled rectifier circuit with parallel transistor - has Zener diode between rectifier anode and gate terminal to protect against excess voltages |
摘要 |
<p>Circuit arrangement with SCR. (thyristors) switched on and off by a brief control or trigger pulse is described and comprises a parallel arrangement of thyristor and transistor in the power current path. More specif. the thyristor is fired by means of a control pulse and is switched off by means of rapid transfer of the current in the parallel connected transistor. A Zener diode is inserted across the power current path between the anode and gate connection of the thyristor, specif. in order to provide a protection facility against excess voltages.</p> |
申请公布号 |
DE2538317(A1) |
申请公布日期 |
1977.03.10 |
申请号 |
DE19752538317 |
申请日期 |
1975.08.26 |
申请人 |
LICENTIA PATENT-VERWALTUNGS-GMBH |
发明人 |
NESTLER,JOHANNES,DR.-ING. |
分类号 |
H02M1/06;(IPC1-7):02M1/06 |
主分类号 |
H02M1/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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