发明名称 Silicon controlled rectifier circuit with parallel transistor - has Zener diode between rectifier anode and gate terminal to protect against excess voltages
摘要 <p>Circuit arrangement with SCR. (thyristors) switched on and off by a brief control or trigger pulse is described and comprises a parallel arrangement of thyristor and transistor in the power current path. More specif. the thyristor is fired by means of a control pulse and is switched off by means of rapid transfer of the current in the parallel connected transistor. A Zener diode is inserted across the power current path between the anode and gate connection of the thyristor, specif. in order to provide a protection facility against excess voltages.</p>
申请公布号 DE2538317(A1) 申请公布日期 1977.03.10
申请号 DE19752538317 申请日期 1975.08.26
申请人 LICENTIA PATENT-VERWALTUNGS-GMBH 发明人 NESTLER,JOHANNES,DR.-ING.
分类号 H02M1/06;(IPC1-7):02M1/06 主分类号 H02M1/06
代理机构 代理人
主权项
地址
您可能感兴趣的专利