| 发明名称 |
Microwave GaAs FET amplifier circuit |
| 摘要 |
A network is coupled to the gate electrode of a FET for generating a negative gate electrode voltage having a selected nominal value for minimizing intermodulation distortion of the FET and/or a value varying with respect to the nominal value directly proportional to temperature changes to provide a constant gain for the FET.
|
| 申请公布号 |
US4011518(A) |
申请公布日期 |
1977.03.08 |
| 申请号 |
US19750626162 |
申请日期 |
1975.10.28 |
| 申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY |
发明人 |
IRVINE, JAMES A.;TORRIONE, PETER |
| 分类号 |
H03F1/30;H03F3/193;(IPC1-7):H03F3/16 |
主分类号 |
H03F1/30 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
