发明名称 |
MOSFET antiparasitic layer |
摘要 |
A semiconductor device which is provided, for the purpose of eliminating parasitic MOSFETs formed between at least two circuit elements (such as MOSFET, TRANSISTOR, RESISTOR, and the like) on a semiconductor substrate, with a high impurity concentration layer of the same conduction type as the substrate in a manner such that the layer is not only in the semiconductor substrate between said circuit elements but is also partially overlapped by the circuit element regions.
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申请公布号 |
US4011581(A) |
申请公布日期 |
1977.03.08 |
申请号 |
US19700068973 |
申请日期 |
1970.09.02 |
申请人 |
HITACHI, LTD. |
发明人 |
KUBO, MASAHARU;NAGATA, MINORU;KOSA, YASUNOBU |
分类号 |
H01L29/78;H01L21/76;H01L23/29;H01L27/02;H01L27/092;H01L29/00;H01L29/06;(IPC1-7):H01L29/78;H01L27/04 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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