发明名称 MULTIPLE STORAGE UNIT
摘要 <p>PURPOSE:To prevent the error without needing the complexed information transfer operation, by means of making the non-voltatil MOS transistor memory cell commonly used in an ordinary memory circuit thereby letting a single memory unit simultaneously memorize plural numbers of informations which are different each other.</p>
申请公布号 JPS5228824(A) 申请公布日期 1977.03.04
申请号 JP19750104076 申请日期 1975.08.29
申请人 TOKYO SHIBAURA ELECTRIC CO 发明人 UCHIDA YUKIMASA
分类号 G06F1/26;G06F12/16;G11C11/417;G11C14/00;G11C16/04;H02J9/06 主分类号 G06F1/26
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