| 摘要 |
PURPOSE:To allow fabrication of semiconductor element, e.g. a transistor or a diode, on a microheater. CONSTITUTION:An insulator thin film 15 is formed on the surface of a silicon substrate 10 having a hole 21 across which the insulator thin film 15 is bridged. A heating element 14 of p-type single crystal silicon thin film containing boron at high concentration is formed tightly on the bridge 18. |
