Multilayer semiconductor laser and detector structures - obtd. by selective epitaxial deposition of lead and tin chalcogenides

摘要

Ternary or quaternary cpds. are epitaxially deposited from the gaseous phase and two binary cpds., and possible one or two of the elements in the cpds., are evaporated in separate evaporators and fed through a mixing chamber for disposition on a substrate. The molecular ratios, compsn. and any stoichiometric deviations in the deposit are controlled by adjusting the temp. and the outlet openings of each evaporator. The mixing chamber is pref. at a higher temp. than the evaporators and the substrate. The appts. is pref. used for mfg. layers of lead chalcogenides. Used e.g. for mfg. laser structures of PbS-PbS1-xSex-PbS, or detectors of Pb1-xSnxSe. A sequence of layers with exact compsns. is easily obtd.