| 摘要 |
1465830 Semi-conductors SIEMENS AG 26 July 1974 [3 Sept 1973] 33091/74 Heading H1K Boundary charges formed adjacent the interface of an insulating substrate and a semiconductor layer epitaxially grown thereon are compensated for by dopant atoms ion-implanted into the interface region. The dopant may be introduced (i) into the substrate surface prior to deposition of the semi-conductor layer, (ii) into a very thin initially deposited semiconductor layer upon which the remainder of the epitaxial layer is subsequently deposited or (iii) through the completed epitaxial layer to the interface region. The completed layer is preferably heated to "activate" the implanted dopant atoms; i.e. to cause them to move from interstitial sites to lattice sites. For Si-onspinal a suitable compensating dopant is P, while B is appropriate for Si-on-sapphire. As and In are also referred to. Circuit components formed in the epitaxial layer may include MOS transistors.
|
