发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING PROCESS
摘要 PURPOSE:For MOS element which uses substrate of poor heat absorption and conduction such as sapphire, etc., separation occurring between element and metal material such as lead frame to which the element is attached can be prevented as well as good element heat radiation effect can be ensured preventing thermal destruction of element.
申请公布号 JPS5227383(A) 申请公布日期 1977.03.01
申请号 JP19750103028 申请日期 1975.08.27
申请人 HITACHI LTD 发明人 AOSHIMA TAKAAKI;YOSHINAKA AKIRA
分类号 H01L29/78;H01L21/52;H01L27/12;H01L29/06;H01L29/786 主分类号 H01L29/78
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