发明名称 |
SEMICONDUCTOR DEVICE AND ITS MANUFACTURING PROCESS |
摘要 |
PURPOSE:For MOS element which uses substrate of poor heat absorption and conduction such as sapphire, etc., separation occurring between element and metal material such as lead frame to which the element is attached can be prevented as well as good element heat radiation effect can be ensured preventing thermal destruction of element.
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申请公布号 |
JPS5227383(A) |
申请公布日期 |
1977.03.01 |
申请号 |
JP19750103028 |
申请日期 |
1975.08.27 |
申请人 |
HITACHI LTD |
发明人 |
AOSHIMA TAKAAKI;YOSHINAKA AKIRA |
分类号 |
H01L29/78;H01L21/52;H01L27/12;H01L29/06;H01L29/786 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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