发明名称 Semiconductor memory device
摘要 A cache memory stores n parts of a main memory, and the main memory is constituted by N sets. Each set is constituted by a plurality of blocks. A memory unit is provided for storing address data of upper address portions each of which designates a memory set of data stored in an address in the cache memory. The address data are stored in an address in the memory device corresponding to the address in the cache memory. Both the addresses designate a memory block in the designated memory set. A validity unit is provided for storing validity bits for indicating a valid/invalid state of address data in each address of the memory unit. An initialization circuit is arranged to simultaneously invalidate the valid bits. Accordingly, the generation of an erroneous coincidence signal can be prevented, and a data reading operation from the memory device can be performed quickly and satisfactorily.
申请公布号 US5014240(A) 申请公布日期 1991.05.07
申请号 US19900569597 申请日期 1990.08.14
申请人 FUJITSU LIMITED 发明人 SUZUKI, ATSUSHI
分类号 G06F12/08;G11C8/12 主分类号 G06F12/08
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