Semiconductor device of complementary integrated circuit

摘要

A complementary IC device comprises: an n-semiconductor substrate; a p-well formed within the n-substrate: a n-channel FET (field effect transistor) formed on the p-well, the n-channel FET including an n-source connected to a first grounded line and an n-drain connected to an output line; a p-channel FET formed on the n-substrate, the p-channel FET including a p-source connected to a first voltage source line and a p-drain connected to the output line; a contact p-region formed on the p-well for providing electrical connection between the p-well and a second grounded line; and a contact n-region formed on the n-substrate for providing electrical connection between the n-substrate and a second voltage source line.