| 摘要 |
In an electron beam exposure system, an electron beam is adjusted and is irradiated onto a number of pattern openings of a mask. The electron beam passed through the number of the pattern openings is deflected by deflection units and is irradiated onto a resist-coated target. The target is divided into a plurality of sub areas whose size corresponds to the size of the pattern openings. Exposure times are calculated for the sub areas so that energy deposited in the resist of the target is brought close to a definite energy.
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