摘要 |
<p>Method of sawing semiconductor material with a gang saw is carried out by superimposing on the high-amplitude low-frequency reciprocating movement of the blades (2) a low-amplitude high-frequency oscillating movement in the same direction, pref. with a frequency of 100-500 Hz and an amplitude of 0 1 mm. The gang saw comprises adjacent saw blades in the form of thin steel strips of which the surface facing the semiconductor material (30) have diamond particles (4) and of which the oscillating frame (8) has an oscillating drive mechanism (20), pref. an electromagnetic or magnetostrictive mechanism. The blades have holes of size and position such that each blade cross-section is smaller at the centre than at the edges.</p> |