| 发明名称 |
METHOD OF PROCESSING SEMICONDUCTOR MATERIALS |
| 摘要 |
PURPOSE:To obtain a liquid-phase epitaxial layer which has a flat surface by melting the substrate surface uniformly with the use of thin solution layers. |
| 申请公布号 |
JPS5223265(A) |
申请公布日期 |
1977.02.22 |
| 申请号 |
JP19750099532 |
申请日期 |
1975.08.18 |
| 申请人 |
HITACHI LTD |
发明人 |
ASANO TETSUO;DOI KOUNEN;UTAKA MASATOSHI |
| 分类号 |
H01L29/80;H01L21/208;H01L21/338;H01L29/76;H01L29/812;H01L33/30 |
主分类号 |
H01L29/80 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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