JUNCTION FIELD EFFECT TRANSISTOR ADAPTED FOR MICROWAVE SWITCHING APPLICATIONS

摘要

The transistor is especially useful for high frequency switching applications. A conductive path between ohmic contacts will pass high frequency signals with very little impedance. The conductive path is comprised of a doped semiconductor layer of one conductivity type to which ohmic contacts are attached. The substrate of the device which underlies the layer is heavily doped with deep impurities of opposite conductivity type so that it has a high resistivity. The high resistivity of the substrate isolates the driving voltage used to switch the device from the signal passed between the ohmic contacts. The device can be turned "OFF" by reverse biasing the PN junction formed between the substrate and the layer. This is accomplished by imposing a driver voltage between one of the ohmic contacts and a metallic contact connected to the substrate.