| 摘要 |
<p>1454323 Semiconductor devices MITSUBISHI DENKI KK 26 Sept 1974 [26 Sept 1973] 41855/74 Heading H1K A thermally sensitive semiconductor switch comprises a PNPN (NPNP) thyristor structure (10, 12, 14, 16) and means for heating the structure and insulated therefrom for altering its state of conductivity. The device is built on a ceramic substrate 40 which has a zig-zag metal track 34 on it and forming the heater. A glass plate 42 separates the thyristor from the heating track 34. A variable resistor may be connected between the gate and cathode to vary the switching temperature.</p> |
