| 摘要 |
<p>Layer of doped semiconducting material (Si) is deposited epitaxially onto a number of substrates heated to the reaction temp. in a reactor chamber flushed with at least one gaseous halo cpd. of the semiconductor material and a gaseous hydride of the dopant with hydrogen as the carrier gas. A current of dry oxygen carried in a neutral gas (A-r) is added to the gas flow before it enters the chamber, such that the O2 content is =2 (1-2)ppm. The homoglueity of deposition characteristics is improved together with the distribution of the dopent alone the chamber contg. the substrates, compensating for the impoverishment of the dopant explained in prior art.</p> |
