发明名称 |
Semiconductor device having multilayered electrode structure |
摘要 |
A semiconductor device wherein two conductive layers, insulated from one another, are laminated on one surface of a semiconductor wafer is described. The two conductive layers are in ohmic contact with two regions of the opposite conduction type to one another and provided on the surface of the semiconductor wafer. Each of the conductive layers either forms the electrode of this semiconductor device or forms an intermediate part connecting one region on the semiconductor wafer with the electrode. By such an electrode configuration, high output power can be obtained in high-frequency band. |
申请公布号 |
US4008484(A) |
申请公布日期 |
1977.02.15 |
申请号 |
US19750589576 |
申请日期 |
1975.06.23 |
申请人 |
FUJITSU LTD. |
发明人 |
MAEKAWA, SHUNICHI;KISAKI, HITOSHI |
分类号 |
H01L21/00;H01L23/482;H01L23/485;H01L29/00;(IPC1-7):01L29/72 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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