METHOD FOR MANUFACTURING DRAM CELL

摘要

PURPOSE: A method for manufacturing a DRAM cell stack capacitor is provided to increase the capacitance by using planar polysilicon as a part of a storage node. CONSTITUTION: A field oxide layer is formed on a semiconductor substrate so as to define an active area and a field area on the semiconductor substrate. A plurality of gates having a sidewall spacer are formed on the semiconductor substrate. After forming an oxide layer on the upper surface of the semiconductor substrate, a polysilicon is formed on the oxide layer. Then, polysilicon and the oxide layer are patterned thereby exposing a surface of the semiconductor substrate. A capacitor dielectric layer(15) is formed on the entire exposed surface of the semiconductor substrate. A polysilicon layer(16) for a capacitor plate electrode is formed on the capacitor dielectric layer(15).