SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A semiconductor device and a method for manufacturing the same are provided to reduce the noise and to simplify the manufacturing process by using an SOI(spin on insulator) layer. CONSTITUTION: A semiconductor device comprises a semiconductor substrate having the first semiconductor layer(21), a buried insulating layer(22) and the second semiconductor layer(23). The first field oxide layer(26) is provided to divide the second semiconductor layer(23) into the first area and the second area. A recess area is formed on a predetermined area of the second area. A gate insulating layer(34) and the gate electrode(35) are stacked on a predetermined areas of the first area and the recess area. The first impurity area is formed on the surface of the second semiconductor layer(23) and the second impurity area is adjacent to the buried insulating layer(22).