| 发明名称 |
ELECTRODE FORMATION METHOD OF SEMICONDUCTOR |
| 摘要 |
<p>PURPOSE:In order to form the electrode on the surface of compound semiconductor with low decomposition temperature, by means of evaporating through cooling it off in the vacuum circumstance.</p> |
| 申请公布号 |
JPS5218168(A) |
申请公布日期 |
1977.02.10 |
| 申请号 |
JP19750093050 |
申请日期 |
1975.08.01 |
| 申请人 |
NIPPON TELEGRAPH & TELEPHONE |
发明人 |
IWANE GANZOU |
| 分类号 |
C23C14/50;H01L21/28;H01L21/285;H01L33/28;H01L33/30;H01L33/36;H01L47/00;H01L47/02 |
主分类号 |
C23C14/50 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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