发明名称 |
Method for forming a metal plug |
摘要 |
A method for forming a metal plug is provided. The method is used to form a metal plug without a hole on a glue/barrier layer within a trench when the glue/barrier layer has been formed for a while. A substrate with a trench therein and a glue/barrier layer formed conformal to the profile of the substrate is provided. A post-treatment is performed on the glue/barrier layer to prevent moisture absorption and to make the glue/barrier become dense. The post-treatment comprises a plasma treatment or a deep UV plus laser treatment. After performing the post-treatment step, a metal layer is formed on the glue/barrier layer at least to fill in the trench. The metal layer other than that filling the trench is removed to form a metal plug.
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申请公布号 |
US6150259(A) |
申请公布日期 |
2000.11.21 |
申请号 |
US19980191162 |
申请日期 |
1998.11.13 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
WU, KUN-LIN;LU, HORNG-BOR |
分类号 |
H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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