Surface decontamination of semiconductors - doped by nuclear transformation using acid etchant

摘要

The process comprises freeing the material from adhering radioactive elements by etching in an acid soln. specific for the semiconductor material so that the amt. etched away is greater than the penetration depth of the radioactive and non-radioactive dopants implanted by impact and replating of dissolved dopant is suppressed. Surface contamination is much lower if an acid, rather than an alkaline etchant is used. If the removal of radioactive nuclides is inadequate, inactive carrier amts. of the corresp. element (e.g. Au soln.) are added. The total amt removed by etching should be ca 50 um and the etching time ca 5 min.