发明名称 Anti-reflection film for photosensitive planar silicon semiconductor - *is made of silicon nitride and has specified thickness
摘要 The refractive index of the reflection suppressing passivating film is related to the refractive index of silicon in normal atmosphere. The relation meets a specified equation, and the film thickness is related to a given wavelength. - The passivating film (6) consists of silicon nitride. Preferably the film thickness is approximately 1000 A for white light. The film application reduces the high silicon reflection capacity, caused by its very high refractive index of approximately.
申请公布号 DE2022896(B2) 申请公布日期 1977.02.10
申请号 DE19702022896 申请日期 1970.05.11
申请人 发明人
分类号 H01L23/29;H01L31/0216;(IPC1-7):01L31/02 主分类号 H01L23/29
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