| 摘要 |
1464137 Gallium-containing semi-conductors WESTERN ELECTRIC CO Inc 19 March 1974 [26 March 1973] 12124/74 Heading C1A [Also in Division C7] A semi-conductor consisting of a galliumcontaining compound, e.g. Ga 1-x X x Y y As 1-y wherein X is Al or In, Y is P or Sb and x and y = 0-0À95, is treated by growing an oxide on the surface thereof, e.g. by anodizing using water or hydrogen peroxide with the pH suitably adjusted as electrolyte; drying the oxide by heating to 150‹-300‹ C. for 0À5-5 hrs. in a non- oxidizing ambient, e.g. nitrogen; and subsequently annealing the dried oxide in a non- oxidizing ambient at 450‹-700‹ C. for 15 mins. -12 hrs. The oxide coating may be used to form a masking pattern prior to diffusing impurities, e.g. Zn, P, Se or Sn into selected portions of the semi-conductor.
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