发明名称 SEMIICONDUCTOR DEVICE
摘要 PURPOSE:To obtain high current amplification multi input-output NAND element in a manner that base width of the primary transistor is narrowed of which collector is encircled by the collector domain of the secondary transistor.
申请公布号 JPS5217776(A) 申请公布日期 1977.02.09
申请号 JP19750093761 申请日期 1975.07.31
申请人 TOKYO SHIBAURA ELECTRIC CO 发明人 TOKUMARU SEIYA;NAKAI MASANORI
分类号 H01L27/082;H01L21/33;H01L21/331;H01L21/8226;H01L27/02;H01L29/70;H01L29/73;H03K19/091 主分类号 H01L27/082
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