SEMICONDUCTOR THIN FILM, SEMICONDUCTOR DEVICE USING THE SAME, MANUFACTURING METHOD FOR BOTH THE SAME AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR THIN FILM

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device such as a thin film transistor, a solar cell or the like having excellent characteristics and reliability and a method for manufacturing the same, by improving crystallinity of a crystalline silicon film formed at a low temperature by a CVD method and preventing a ruggedness of a surface of a film and an oxidation of a grain boundary. SOLUTION: In the semiconductor device, an ion, an optical energy or a catalytic effect is given when the crystalline thin film is deposited. Thus, crystallinity near an interface of a board of the crystalline silicon thin film is improved or its surface is flattened. In this manner, the semiconductor device having the excellent characteristics and the high reliability can be formed.