| 摘要 |
<p>PURPOSE:To widen the base width of a bipolar transistor, which uses a first diffused region as its base region, to reduce a current amplification factor and to make it possible to realize a memory cell semiconductor device, which is actuated with a low current and high in reliability and efficiency, by a method wherein the depth of the P-N junction of the first diffused region is made deeper than that of the P-N junction of a second diffused region. CONSTITUTION:A semiconductor device is formed into one having an inverse conductivity type region 3 provided on a one conductivity type semiconductor substrate (a P-type silicon substrate) 1, a field insulating film (a field oxide film) 4, which is provided on the surface of the region 3 and partitions an element formation region, a gate electrode 5 provided on the element formation region through a gate insulating film, a one conductivity type first diffused region 12, which is provide in the element formation region and aligned to the electrode 5 and has a deep P-N junction, a one conductivity type second diffused region (a P-type diffused region) 9 having a P-N junction shallower than that of the region 12 and an inverse conductivity type third diffused region 11 provided in the aboove region 12. For example, a MOS transistor and a bipolar transistor, which uses an N<+> buried region 2 and an N<-> region 3 as its collector region, uses a P-type diffused region 12 as its base region and uses an N<+> diffused region 11 as its emitter region, are constituted.</p> |
