发明名称 Target structure for use in photoconductive image pickup tubes
摘要 In a method of manufacturing a target structure for use in a photoconductive image pickup tube when depositing a P-type photoconductive film on an N-type transparent conductive film deposited on one side of a transparent substrate which acts as an incident window of the image pickup tube, the P-type photoconductive film is made up of first and second photoconductive substances. The commencement of the deposition of the first photoconductive substance is delayed a predetermined time than that of the second photoconductive substance and the deposition of the first photoconductive substance is terminated before completion of the deposition of the second photoconductive material thereby forming a layer of the first photoconductive substance not contiguous to the junction between the N-type transparent conductive film and the P-type photoconductive film and having a predetermined thickness.
申请公布号 US4007395(A) 申请公布日期 1977.02.08
申请号 US19750580473 申请日期 1975.05.23
申请人 HITACHI, LTD. 发明人 NONAKA, YASUHIKO;GOTO, NAOHIRO;SHIDARA, KEIICHI
分类号 H01J29/45;H01L31/08;(IPC1-7):H01J29/45;H01J31/38 主分类号 H01J29/45
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