Molecule detecting sensor

摘要

To improve photocurrent characteristics of a molecule detecting sensor, the molecule detecting sensor is formed in the steps of: depositing a first silicon layer (12) on a R-plane sapphire substrate (11); turning the first silicon layer (12) amorphous by implanting silicon ions thereinto in the vicinity of the silicon layer-sapphire substrate interface; recrystallizing an amorphous silicon layer by heat treatment; oxidizing part of the first silicon layer (12) by introducing a recrystallized silicon layer into an oxidation furnace; removing a silicon oxide film (13) formed by an oxidation; depositing a second silicon layer (15) on a seed silicon layer (14) which is a first silicon layer left after removing the steps of forming an insulator layer (3) on a single crystal silicon layer (2) which is a laminated structure made up of the seed silicon layer (14) and the second silicon layer (15); and placing an electrolyte (4) on the insulator layer.