| 摘要 |
A rapid diode is made by (a) depositing a layer of silica on the first surface of a Si substrate, (b) depositing on the silica layer a layer of polycrystalline Si, (c) effecting a diffusion with a dopant of the same conductivity type as the substrate, (d) chemically removing the layers of silica and polycrystalline Si and (e) effecting a diffusion with a dopant of opposite type conductivity to the substrate. A transistor may also be made using steps (a)-(d) above followed by (f) depositing a layer of silica on each face of the element obtd., (g) diffusing in a dopant of conductivity type opposite to that of the substrate, (h) opening one of the SiO2 layers and (i) diffusing in a dopant of the same conductivity type as the substrate, but to a shallow depth compared with step (c). Similar methods for making a thyristor and a Zener diode are also claimed. |
