| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor structure and a manufacturing method. SOLUTION: This structure includes a semiconductor material layer having an upper surface formed along a crystal plane, which comprises a device region formed therein. Spatially separated metallization levels, each including a conductor, are formed on the semiconductor layer. The contact, formed along an axis perpendicular to the plane, connects the conductor in a second level to the conductor in a first level electrically. The contact includes a narrow portion extending to the conductor in the first level and a wide portion extending to the conductor in the second level from the narrow portion. The method for manufacturing the semiconductor structure comprises a step for forming dielectric material layers on the semiconductor layer having an opening formed in the dielectric layer. The opening comprises the wide portion extending from the upper surface and the narrow portion extending the opening towards the semiconductor layer from the wide portion. Both narrow and wide portions of the opening are filled with a conductor material, and the conductors are formed on the opening so as to contact the conductor material electrically. |
