| 摘要 |
<p>A layer of a metal nitride represented by (Ti1-XAX)N (wherein A is at least one metal selected among aluminum, gallium, and indium) is formed, and a layer of a compound semiconductor based on a Group III element nitride is formed on the metal nitride layer. A titanium layer is interposed between the metal nitride layer with a sufficient thickness and a substrate. Removing the titanium layer gives a Group III element nitride compound semiconductor element.</p> |
