| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a thin film transistor which reduces the fluctuation of the capacity made between a gate and a drain in manufacturing process, and a liquid crystal display which reduces the poor quality on display of an image. SOLUTION: In the liquid crystal display, a picture element electrode and a thin film transistor connected through a drain electrode to the picture element electrode are arranged in matrix form. The thin film transistor has a first drain electrode 2-1 which is so made as to overlap the region of the gate electrode including one end out of the two ends in opposition of the gate electrode 5, and a second drain electrode 2-2 which is so made as to overlap the region of the gate electrode including other end of the gate electrode 5 symmetrically with the first drain electrode 2-1.</p> |
