SEMICONDUCTOR DEVICE, LIQUID CRYSTAL DISPLAY UNIT, EL DISPLAY UNIT, MANUFACTURING METHOD OF SEMICONDUCTOR THIN FILM AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device having high characteristic and high reliability. SOLUTION: The semiconductor device is provided with a thin film transistor (40) having a multi-crystal semiconductor layer (11), and has low-concentration impurity areas (18a, 18b) which are positioned among a channel area (22) and high concentration impurity areas (24, 17) positioned on both the sides of the channel area (22) in the semiconductor layer (11) and in which impurity concentration is lower than the high concentration impurity area (24, 17). The particulate diameter of a crystal (14) in which at least a part exists in the low concentration impurity area (18b) is larger than that of the other crystal (15).