发明名称 MAGNETORESISTANCE ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a vertical current type magnetoresistance element for achieving low anti-magnetic force, high MR, and high heat resistance that have been difficult conventionally. SOLUTION: The magnetoresistance element includes an intermediate layer and a pair of magnetic layers for pinching the intermediate layer while a free magnetic layer or a fixed magnetic layer out of the magnetic layer is a multilayer film made of at least a layer of non-magnetic body layer and a magnetic layer for pinching the non-magnetic body, and an element area that is prescribed as the area of the intermediate layer for allowing current that flows vertically to the film surface to pass is 1,000μm2 or less.
申请公布号 JP2002204010(A) 申请公布日期 2002.07.19
申请号 JP20010249934 申请日期 2001.08.21
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 HIRAMOTO MASAYOSHI;MATSUKAWA NOZOMI;ODAKAWA AKIHIRO;IIJIMA KENJI;SAKAKIMA HIROSHI
分类号 G01R33/09;G11B5/39;G11C8/02;H01F10/14;H01F10/16;H01F10/32;H01F41/18;H01F41/30;H01L21/8246;H01L27/105;H01L27/22;H01L43/08;H01L43/12;(IPC1-7):H01L43/08 主分类号 G01R33/09
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