| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for fabricating a polysilicon type thin film transistor using a novel system for reducing the process cost in place of a high cost process, e.g. laser activation process. SOLUTION: The method for fabricating a polysilicon type thin film transistor comprises a step for formed a polysilicon layer on a substrate, a step for forming a gate insulation film and a gate film on the polysilicon layer, a step for forming a gate pattern by patterning and implanting impurities into the substrate on which the gate pattern is formed, a step for forming a cover film on the substrate implanted with impurities, and a step for performing thermal activation following to formation the cover film. Consequently, thermal activation can be utilized in place of high cost laser annealing for impurity implantation and activation in the fabrication process of a polysilicon type thin film transistor. |
