METHOD FOR FORMING METAL LINE IN SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a metal line in a semiconductor device is provided to be capable of performing easily contact processing irrespective of the depth of contact holes. CONSTITUTION: The first insulating layer(2) is formed on a silicon substrate(1) defined by a cell and peripheral region(100,200). A conductive pattern(3) is formed on the cell region(100) of the silicon substrate. The second insulating layer(4) is formed on the resultant structure. The first contact hole is formed by selectively etching the second and first insulating layer(4,2) located at a boundary part of the cell and peripheral region. A tungsten plug(6) is filled into the first contact hole. The second contact holes(8) are formed to expose the conductive pattern(3) of the cell region(100) and the silicon substrate(1) of the peripheral region(200). A tungsten film is formed to connect the silicon substrate and the tungsten plug via the second contact holes(8).