| 摘要 |
PURPOSE: A method for forming wordline strapping of a semiconductor device is provided to improve a photolithography process margin and the area of a semiconductor device by forming a high density impurity diffusion region in an interface between a semiconductor substrate and a bitline contact in making a layout without making the bitline contact overlap with a wordline and by generating a reverse voltage. CONSTITUTION: A field oxide layer(13), a wordline(15), the first insulation layer(17) and the second insulation layer(19) are sequentially formed on a semiconductor substrate(11). An etch process is performed by a photolithography process using a contact mask for a bitline(21) until the lower part of the semiconductor substrate is exposed. The bitline is coupled to the lower part of the semiconductor substrate through a contact having a high density impurity diffusion region in an interface between the exposed lower part of the semiconductor substrate and the contact. The third insulation layer pattern(23) and a metal interconnection(25) are sequentially formed on the resultant structure.
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