发明名称 High power semiconductor laser diode
摘要 The present invention relates to a portable laser treatment device, comprising case ( 10 ), semiconductor laser diode ( 11 ) which is installed inside the case ( 10 ) and irradiates laser, condensing lens ( 12 ) which is installed in front of the semiconductor laser diode ( 11 ), power supply, power switch ( 30 ) which is installed outside the case ( 10 ) and controls the supply of power, irradiation switch ( 31 ) which controls the irradiation of laser and controller ( 32 ) which controls the operation of the device according to the state of to switches, wherein distance detecting sensor ( 40 ) is installed on the case ( 10 ) to measure the distance between an irradiated surface and condensing lens ( 12 ) and said controller ( 32 ) receives signal from the distance detecting sensor ( 40 ) and cuts off laser irradiation when the distance between the irradiated surface and condensing lens ( 12 ) is greater than focal distance of the condensing lens ( 12 ).
申请公布号 US7033350(B2) 申请公布日期 2006.04.25
申请号 US20030332396 申请日期 2003.07.31
申请人 BAHK JONG-YOON 发明人 BAHK JONG-YOON
分类号 A61B18/18;A61B18/00;A61B18/20;A61B19/00;A61N5/06 主分类号 A61B18/18
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