| 发明名称 | Double diamond shaped unmerged epitaxy for tall fins in tight pitch | ||
| 摘要 | A semiconductor structure is provided that includes a semiconductor fin extending upwards from a surface of a substrate. A source/drain structure is located on each side of the semiconductor fin. The source/drain structure comprises an upper source/drain portion having a faceted topmost surface and located on an upper portion of the semiconductor fin, and a lower source/drain portion having a faceted topmost surface and located on a lower portion of the semiconductor fin. In accordance with the present application, upper source/drain portion of the source/drain structure is spaced apart from the lower source/drain portion of the source/drain structure by a dielectric spacer portion. | ||
| 申请公布号 | US9368512(B1) | 申请公布日期 | 2016.06.14 |
| 申请号 | US201514729871 | 申请日期 | 2015.06.03 |
| 申请人 | INTERNATIONAL BUSINESS MACHINES CORPORATION | 发明人 | Cheng Kangguo;Reznicek Alexander;Schepis Dominic J.;Surisetty Charan V. V. S. |
| 分类号 | H01L27/12;H01L21/8234;H01L29/66;H01L21/84 | 主分类号 | H01L27/12 |
| 代理机构 | Scully, Scott, Murphy & Presser, P.C. | 代理人 | Scully, Scott, Murphy & Presser, P.C. ;Meyers Steven J. |
| 主权项 | 1. A semiconductor structure comprising: a semiconductor fin extending upwards from a surface of a substrate; and a source/drain structure located on each side of the semiconductor fin, wherein said source/drain structure comprises an upper source/drain portion having a faceted topmost surface and located on an upper portion of said semiconductor fin, and a lower source/drain portion having a faceted topmost surface and located on a lower portion of said semiconductor fin, wherein said upper source/drain portion of said source/drain structure is spaced apart from said lower source/drain portion of said source/drain structure by a dielectric spacer portion. | ||
| 地址 | Armonk NY US | ||