发明名称 |
Phase changeable memory devices including nitrogen and/or silicon and methods for fabricating the same |
摘要 |
Phase-changeable memory devices and method of fabricating phase-changeable memory devices are provided that include a phase-changeable material pattern of a phase-changeable material that may include nitrogen atoms and/or silicon atoms. First and second electrodes are electrically connected to the phase-changeable material pattern and provide an electrical signal thereto. The phase-changeable material pattern may have a polycrystalline structure.
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申请公布号 |
US7402851(B2) |
申请公布日期 |
2008.07.22 |
申请号 |
US20040910945 |
申请日期 |
2004.08.04 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HIDEKI HORII;KUH BONG-JIN;HA YONG-HO;PARK JEONG-HEE;YI JI-HYE |
分类号 |
H01L27/148;G11C16/02;H01L27/24;H01L29/02;H01L29/04;H01L29/768;H01L45/00;H01L47/00 |
主分类号 |
H01L27/148 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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