| 摘要 |
PURPOSE: To minimize 2nd-order and 3rd-order harmonic distortions by arranging a F-abry-Perot etalon, of which the reflectance is less than 10%, as an interferometer device inside the optical path of modulated beams of a semiconductor injection laser. CONSTITUTION: Beams 11 of a semiconductor injection laser 10 is modulated corresponding to an analog amplitude or a frequency modulate signal by a multiplex signal channel bank 40. Inside the optical path of this beam 11, a Fabry-Perot etalon 12 having counter faces with the reflectance almost less than 10% is arranged. A modulated beam 13 passed through the etalon 12 is split by a splitter 14, and beams 15 about for 90% are made incident to an optical fiber 16 and outputted through a photodiode detector 17 and an amplifier 18 to a utilization means 20. Beams 13 for remaining 10% are connected through a photodetector 32 and an amplifier 33 to a 2ndorder harmonic detector 34, and a DC bias source 35 is controlled, by the output of the detector 34. |
