主权项 |
1. An imaging device, comprising:
a semiconductor substrate including a plurality of photoelectric conversion portions, wherein the plurality of photoelectric conversion portions are arranged to share at least a floating diffusion, a reset transistor electrically connected to the floating diffusion, and an amplification transistor electrically connected to the floating diffusion; a first transfer transistor electrically connected to a first photoelectric conversion portion of the plurality of photoelectric conversion portions; and a plurality of metal layers disposed at a side of the semiconductor substrate opposite a light-incident side of the semiconductor substrate, wherein the plurality of metal layers includes:
a first transfer wiring line electrically connected to a gate electrode of the first transfer transistor and disposed to extend in a horizontal direction;a reset wiring line electrically connected to a gate electrode of the reset transistor and disposed in parallel to the first transfer wiring line, wherein the reset wiring line is disposed in a same layer of the plurality of metal layers as the first transfer wiring line; anda well contact wiring line electrically connected to a well contact, wherein the well contact wiring line is configured to apply a well contact voltage to a semiconductor well area of the imaging device, wherein the well contact wiring line is disposed to extend, at least in part, in the horizontal direction, wherein the well contact wiring line is disposed, at least in part, to extend in the horizontal direction in a different layer than the first transfer wiring line. |