INTEGRATING VLSI-COMPATIBLE FIN STRUCTURES WITH SELECTIVE EPITAXIAL GROWTH AND FABRICATING DEVICES THEREON

摘要

Different n- and p-types of device fins are formed by epitaxially growing first epitaxial regions of a first type material from a substrate surface at a bottom of first trenches formed between shallow trench isolation (STI) regions. The STI regions and first trench heights are at least 1.5 times their width. The STI regions are etched away to expose the top surface of the substrate to form second trenches between the first epitaxial regions. A layer of a spacer material is formed in the second trenches on sidewalls of the first epitaxial regions. Second epitaxial regions of a second type material are grown from the substrate surface at a bottom of the second trenches between the first epitaxial regions. Pairs of n- and p-type fins can be formed from the first and second epitaxial regions. The fins are co-integrated and have reduced defects from material interface lattice mismatch.

主权项

1. A method to form a pair of electronic device fins comprising:
simultaneously epitaxially growing a first and second epitaxial region of a first type of epitaxial material on a substrate surface at a bottom of a first and a second trench formed beside a shallow trench isolation (STI) region; patterning and etching the STI region to expose the top surface of the substrate to form a third trench between first and second epitaxial region sidewalls of the first and second epitaxial regions; forming a layer of a spacer material on the first and second epitaxial region sidewalls; epitaxially growing a third epitaxial region of a second type of epitaxial material on the substrate surface at a bottom of a third trench formed between the first and second epitaxial regions sidewalls; then patterning and etching the first, second and third epitaxial regions to form a first, second and third pair of electronic device fins from the first, second and third epitaxial regions.